feb.1999 b 2 x 30 14 3-m6 b 2 x 23.5 8 5 85 93 108 23 23 b 1 x c 2 e 1 7.5 18 518518 tab#110, t=0.5 16 30 7 c 2 e 1 b 1 x e 2 b 2 e 2 c 1 e 1 b 1 label 6 15 6 48 62 b 1 e 1 b 2 e 2 e 2 c 1 f 6.5 mitsubishi transistor modules QM200DY-HB high power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders QM200DY-HB ? i c collector current ........................ 200a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 typical value ratings 600 600 600 7 200 200 1240 12 2000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =200a, i b =260a Ci c =200a (diode forward voltage) i c =200a, v ce =2.5v v cc =300v, i c =200a, i b1 =400ma, Ci b2 =4a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 4.0 4.0 200 2.5 3.0 1.8 2.5 10 2.0 0.1 0.33 0.075 mitsubishi transistor modules QM200DY-HB high power switching use insulated type
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM200DY-HB high power switching use insulated type ? 10 ? 10 ? 10 1 10 7 5 4 3 3 3 2 2 0 10 7 5 4 1 10 23457 2 10 23457 3 10 i b =260ma v be(sat) v ce(sat) t j =25? t j =125? 500 400 300 200 100 0 01 23 4 5 t j =25? i b =500ma i b =260ma i b =100ma i b =1a i b =50ma 7 5 4 3 3 2 0 10 7 5 4 3 2 2.2 4.2 3.8 3.4 3.0 2.6 v ce =2.5v t j =25? 7 5 3 2 7 5 4 3 2 v ce =2.5v t j =25? t j =125? 2 10 3 10 7 5 4 3 2 4 10 1 10 2 10 47 5 3 2 3 10 4 v ce =5.0v 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 444 i c =300a i c =100a i c =200a 0 10 1 10 ? 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 23457 2 10 1 10 23457 3 10 t s t f t on t j =25? t j =125? v cc =300v i b1 =400ma i b2 =?a
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM200DY-HB high power switching use insulated type z th (jCc) ( c/ w) ? 10 ? 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 400 0 0 200 400 600 800 100 300 500 700 300 200 100 350 250 150 50 t j =125? i b2 =?0a i b2 =?.5a 1 10 7 5 4 3 2 0 10 23457 1 10 0 10 7 5 4 3 3 2 2 t s t f 3457 2 10 t j =25? t j =125? v cc =300v i c =200a i b1 =400ma 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? dc 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 444 1ms 10ms 100? 50? 500? 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0.4 2.4 2.0 1.6 1.2 0.8 t j =25? t j =125? 1 10 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.04 0.02 0.09 0.07 0.03 0.01 0 7 5 3 2 1 10 0 10 0 10 444 non?epetitive collector dissipation second breakdown area 0.05
feb.1999 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM200DY-HB high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s) ? 10 ? 10 ? 10 7 5 4 3 2 7 5 4 3 2 0 400 800 1200 1600 2000 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 7 5 3 2 1 10 0 10 0 10 444 42 3 7 5 3 2 3 3 2 7 5 3 2 4 7 5 3 4 47 5 3 24 2 10 1 10 1 10 2 10 3 10 ? 10 0 10 t j =25? t j =125? v cc =300v i b1 =400ma i b2 =?a q rr i rr t rr
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